Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma

Journal of Applied Physics

Volumn 88, Issue 1, 2000, Pages 576-581

  Sumiya, Shigeaki ^a   Mizutani, Yuko ^a   Yoshida, Ryohei ^a   Hori, Masaru ^a   Goto, Toshio ^a   Ito, Masafumi ^b   Tsukada, Tsutomu ^c   Samukawa, Seiji ^d  

^a NAGOYA UNIVERSITY   (Japan)

^b WAKAYAMA UNIVERSITY   (Japan)

^c Canon ANELVA Technix Corporation   (Japan)

^d NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000905671     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373698     Document Type: Article

References (21)

1. A. Matsuda, J. Non-Cryst. Solids 59&60, 767 (1983).
2. C. C. Tsai, G. B. Anderson, R. Thompson, and B. Wacker, J. Non-Cryst. Solids 114, 151 (1989).
3. M. Mohri, H. Kakinuma, and T. Tsuruoka, IEICE Trans. Electron. E-77C, 1677 (1994).
4. S. Kumar, B. Drévillon, and C. Godet, J. Appl. Phys. 60, 1542 (1986).
5. R. Nozawa, H. Takeda, M. Ito, M. Hori, and T. Goto, J. Appl. Phys. 85, 1172 (1999).
6. I. Solomon, B. Drévillon, H. Shirai, and N. Layadi, J. Non-Cryst. Solids 164, 989 (1993).
7. R. Nozawa, H. Takeda, M. Ito, M. Hori, and T. Goto, J. Appl. Phys. 81, 8035 (1997).
8. S. Samukawa, Appl. Phys. Lett. 67, 1414 (1995).
9. S. Samukawa, Y. Nakagawa, T. Tsukada, H. Ueyama, and K. Shinohara, Jpn. J. Appl. Phys., Part 1 34, 6805 (1995).
10. B. Mebarki et al., Mater. Lett. 41, 16 (1999).
11. Y. Nakagawa, E. Wani, K. Takagi, S. Samukawa, K. Shinohara, H. Ueyama, H. Sato, and T. Tsukada, Dig. Microprocesses and Nanotechnol. '97, Nagoya (1997), Vol. 56.
12. Z. Iqbal and S. Veprek, J. Phys. C 15, 377 (1982).
13. T. Kaneko, K. Onisawa, M. Wakagi, Y. Kita, and T. Minemura, Jpn. J. Appl. Phys., Part 1 32, 4907 (1993).
14. P. K. Janev, W. E. Kanger, K. Evans, Jr., and D. E. Post; Elementary Processes in Hydrogen-Helium Plasmas (Springer, Berlin, 1987).
15. C. F. Barnett et al., Atomic Data for Controlled Fusion Research (1977).
16. H. Akashi and S. Samukawa, Jpn. J. Appl. Phys., Part 2 36, L877 (1997).
17. S. Samukawa and H. Akashi, IEEE Trans. Plasma Sci. 26, 1621 (1998).
18. H. Akashi, S. Samukawa, N. Takahashi, and T. Sasaki, Program of the 50th Annual Gaseous Electronics Conference (1997), Vol. 42, p. 1744.
19. M. Sakakibara, M. Hiramatsu, and T. Goto, J. Phys. D 15, 177 (1982).
20. Y. Yamamoto, H. Nomura, T. Tanaka, M. Hiramatsu, M. Hori, and T. Goto, Jpn. J. Appl. Phys., Part 1 33, 4320 (1994).
21. V. Schulz-von der Gathen and H. F. Dobele, Plasma Chem. Plasma Process. 16, 461 (1996).