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Volumn 103, Issue 2, 2008, Pages

A microwave-induced plasma source: Characterization and application for the fast deposition of crystalline silicon films

(3) Jia, Haijun a Kuraseko, Hiroshi b Kondo, Michio a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b FURUKAWA ELECTRIC CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRON TEMPERATURE; EMISSION SPECTROSCOPY; MICROWAVES; SILICON; STARK EFFECT;

BOLTZMANN PLOT METHOD; MICROWAVE INDUCED PLASMA SOURCE; SILICON FILMS;

PLASMA SOURCES;

EID: 38849085176 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2833339 Document Type: Article

Times cited : (10)

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