Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Dong, Y F ^a   Mi, Y Y ^a   Feng, Y P ^a   Huan, A C H ^b   Wang, S J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; FERMI LEVEL; GATES (TRANSISTOR); INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; MONOLAYERS; PLATINUM; RHODIUM; SURFACE CHEMISTRY;

LAALO3 INTERFACES; METAL GATES; MONOLAYER HETEROVALENT METALS; SCHOTTKY BARRIER HEIGHTS (SBH);

SCHOTTKY BARRIER DIODES;

EID: 33748969049     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357012     Document Type: Article

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