The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes

Semiconductor Science and Technology

Volumn 19, Issue 9, 2004, Pages 1113-1116

  Cetin, Hidayet ^a   Şahin, Bünyamin ^a   Ayyildiz, Enise ^a   Türüt, Abdulmecit ^b  

^a ERCIYES UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ETCHING; FERMI LEVEL; HYDROFLUORIC ACID; HYDROPHILICITY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON WAFERS; THERMAL EFFECTS; THERMIONIC EMISSION;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); BARRIER HEIGHTS (BH); INTERFACIAL LAYERS; PHOTOVOLTAGE TECHNIQUES;

SCHOTTKY BARRIER DIODES;

EID: 4544247397     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/9/007     Document Type: Article

References (22)

1. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (Oxford: Clarendon)
2. Thompson R D and Tu K N 1982 J. Appl. Phys. 53 4285
3. Song Y P, Van Meirhaeghe R L, Laflere W H and Cardon F 1986 Solid-State Electron. 29 633
4. Sullivan J P, Tung R T, Pinto M R and Graham W R 1991 J. Appl. Phys. 70 7403
5. Tung R T, Levi A F, Sullivan J P and Schrey F 1991 Phys. Rev. Lett. 66 72
6. Werner J H and Güttler H H 1991 J. Appl. Phys. 69 1522
7. Werner J H and Güttler H H 1993 J. Appl. Phys. 73 1315
8. Kampen T U and Mönch W 1995 Surf. Sci. 331 490
9. Detavernier C, Van Meirhaeghe R L, Donaton R, Maex K and Cardon F 1998 J. Appl. Phys. 84 3226
10. Zs J Horváth 1995 Vacuum 46 963
11. Chand S 2002 Semicond. Sci. Technol. 17 36
12. Calvet L E, Wheeler R G and Reed M A 2002 Appl. Phys. Lett. 80 1761
13. Hanselaer P L, Laflere W H, Van Meirhaeghe R L and Cardon F 1986 Appl. Phys. A 39 129
14. Kern W and Puotinen D A 1970 RCA Rev. 31 187
15. Angermann H, Dittrich Th and Flietner H 1994 Appl. Phys. A 59 193
16. Mönch W 19997. Vac. Sci. Technolol. B 17 1867
17. Schmitsdorf R F, Kampen T U and Mönch W 1997 J. Vac. Sci. Technolol. B 15 1221
18. Tung R T 1992 Phys. Rev. B 45 13509
19. Im H J, Ding Y, Pelz J P and Choyke W J 1986 Phys. Rev. B 64 075310
20. Aboelfotoh M O and Tu K N 1986 Phys. Rev. B 34 2311
21. Fukutani K, Iwai H, Yamashita H, Murata Y, Hatori S and Kobayashi K 1997 Surf. Sci. 377 1010
22. Mönch W 1994 Europhys. Lett. 27 479