The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Lee, Donkoun ^a   Raghunathan, Shyam ^a   Wilson, Robert J ^a   Nikonov, Dmitri E ^b   Saraswat, Krishna ^a   Wang, Shan X ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCHOTTKY BARRIER HEIGHTS; SPIN DIODES; SPIN INJECTION; ULTRA-THIN;

COBALT COMPOUNDS; CONTACT RESISTANCE; FERROMAGNETIC MATERIALS; GERMANIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SEMICONDUCTOR QUANTUM DOTS; SPIN DYNAMICS;

SCHOTTKY BARRIER DIODES;

EID: 76449090211     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3285163     Document Type: Article

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