Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance

Applied Physics Letters

Volumn 98, Issue 17, 2011, Pages

  Yuan, Ze ^a   Nainani, Aneesh ^a   Sun, Yun ^b   Lin, J Y Jason ^a   Pianetta, Piero ^b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; DEPINNING; FERMI LEVEL PINNING; FOUR-ORDER; INTERFACIAL LAYER; METAL CONTACTS; SCHOTTKY BARRIER HEIGHTS; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; TIO; TUNNELING RESISTANCE; VALENCE BAND EDGES;

ELECTRON MOBILITY; EMISSION SPECTROSCOPY; FERMI LEVEL; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SYNCHROTRON RADIATION;

GALLIUM ALLOYS;

EID: 79955698428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3584862     Document Type: Article

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