Barrier formation at metal-organic interfaces: Dipole formation and the charge neutrality level

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 107-112

  Vazquez H ^a   Flores, F ^a   Oszwaldowski, R ^a,b   Ortega, J ^a   Perez R ^a   Kahn, A ^c  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b Instytut Fizyki   (Poland)

^c Princeton University   (United States)

Author keywords

Barrier formation; Charge neutrality level; Energy level alignment; Fermi level pining; Induced density of interface states; Metal organic interface

Indexed keywords

AROMATIC HYDROCARBONS; ELECTRIC CHARGE; ELECTRON ENERGY LEVELS; FERMI LEVEL; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA;

BARRIER INFORMATION; CHARGE NEUTRALITY LEVELS; ENERGY LEVEL ALIGNMENT; FERMI LEVEL PINNING; INDUCED DENSITY OF INTERFACE STATES; METAL-ORGANIC INTERFACES;

ORGANOMETALLICS;

EID: 3342998559     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.084     Document Type: Conference Paper

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