Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Jeon, Kun Rok ^a   Min, Byoung Chul ^b   Lee, Hun Sung ^a   Shin, Il Jae ^b   Park, Chang Yup ^a   Shin, Sung Chul ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NEUTRALITY LEVEL; OHMIC BEHAVIOR; PINNING PARAMETERS; RA PRODUCT; RESISTANCE-AREA PRODUCTS; ROOM TEMPERATURE; SCHOTTKY; SINGLE-CRYSTALLINE; SPIN INJECTION; TUNNEL CONTACTS; ULTRA-THIN;

ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; GERMANIUM; SPIN DYNAMICS;

CRYSTALLINE MATERIALS;

EID: 77955148842     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3454276     Document Type: Article

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