SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Reducing Schottky barrier height for Fe/n-GaAs junction by inserting thin GaOx layer

(4) Saito, H a Mineno, Y a,b Yuasa, S a Ando, K a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b TOHO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; INSERTION LAYERS; OXIDE MATERIALS; SCHOTTKY BARRIER HEIGHTS; SPINTRONICS DEVICE;

GALLIUM ARSENIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR METAL BOUNDARIES;

GALLIUM ALLOYS;

EID: 79955397465 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3535326 Document Type: Conference Paper

Times cited : (5)

References (28)

1
- 0001532921
- 10.1126/science.250.4984.1092
- G. A. Prinz, Science 250, 1092 (1990). 10.1126/science.250.4984.1092
- (1990) Science , vol.250 , pp. 1092
- Prinz, G.A.¹

2
- 33749989400
- Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets
- DOI 10.1038/nmat1736, PII NMAT1736
- B. C. Min, K. Monohashi, C. Lodder, and R. Jansen, Nature Mater. 5, 817 (2006). 10.1038/nmat1736 (Pubitemid 44570865)
- (2006) Nature Materials , vol.5 , Issue.10 , pp. 817-822
- Min, B.-C.¹ Motohashi, K.² Lodder, C.³ Jansen, R.⁴

3
- 33646751359
- 10.1063/1.2177203
- P. Van Dorpe, R. Vanheertum, H. Boukari, W. Van Roy, and G. Borghs, J. Appl. Phys. 99, 08S702 (2006). 10.1063/1.2177203
- (2006) J. Appl. Phys. , vol.99
- Van Dorpe, P.¹ Vanheertum, R.² Boukari, H.³ Van Roy, W.⁴ Borghs, G.⁵

4
- 79956043366
- Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure
- DOI 10.1063/1.1491010
- V. F. Motsnyi, V. I. Safarov, J. De Boeck, J. Das, W. Van Roy, E. Goovaerts, and G. Borghs, Appl. Phys. Lett. 81, 265 (2002). 10.1063/1.1491010 (Pubitemid 34803015)
- (2002) Applied Physics Letters , vol.81 , Issue.2 , pp. 265
- Motsnyi, V.F.¹ De Boeck, J.² Das, J.³ Van Roy, W.⁴ Borghs, G.⁵ Goovaerts, E.⁶ Safarov, V.I.⁷

5
- 79956027901
- Spin-polarized light-emitting diode using metal/insulator/semiconductor structures
- DOI 10.1063/1.1496493
- T. Manago and H. Akinaga, Appl. Phys. Lett. 81, 694 (2002). 10.1063/1.1496493 (Pubitemid 34923995)
- (2002) Applied Physics Letters , vol.81 , Issue.4 , pp. 694
- Manago, T.¹ Akinaga, H.²

6
- 2942685554
- 10.1063/1.1758305
- O. M. J. van't Erve, G. Kioseoglou. A. T. Hanbicki, C. H. Li, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 84, 4334 (2004). 10.1063/1.1758305
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4334
- Van'T Erve, O.M.J.¹ Kioseoglou, G.² Hanbicki, A.T.³ Li, C.H.⁴ Jonker, B.T.⁵ Mallory, R.⁶ Yasar, M.⁷ Petrou, A.⁸

7
- 34547613905
- 10.1038/nphys673
- B. T. Jonker, G. Kioseoglou. A. T. Hanbicki, C. H. Li, and P. E. Thompson, Nature Phys. 3, 542 (2007). 10.1038/nphys673
- (2007) Nature Phys. , vol.3 , pp. 542
- Jonker, B.T.¹ Kioseoglou, G.² Hanbicki, A.T.³ Li, C.H.⁴ Thompson, P.E.⁵

8
- 56849119293
- 10.1063/1.3028343
- Y. Zhou, M. Ogawa, X. Han, and K. L. Wang, Appl. Phys. Lett. 93, 202105 (2008). 10.1063/1.3028343
- (2008) Appl. Phys. Lett. , vol.93 , pp. 202105
- Zhou, Y.¹ Ogawa, M.² Han, X.³ Wang, K.L.⁴

9
- 67649173373
- 10.1063/1.3157128
- Y. Zhou, M. Ogawa, M. Bao, X. Han, R. K. Kawakami, and K. L. Wang, Appl. Phys. Lett. 94, 242104 (2009). 10.1063/1.3157128
- (2009) Appl. Phys. Lett. , vol.94 , pp. 242104
- Zhou, Y.¹ Ogawa, M.² Bao, M.³ Han, X.⁴ Kawakami, R.K.⁵ Wang, K.L.⁶

10
- 70349155382
- 10.1103/PhysRevLett.103.117202
- H. J. Jang and I. Appelbaum, Phys. Rev. Lett. 103, 117202 (2009). 10.1103/PhysRevLett.103.117202
- (2009) Phys. Rev. Lett. , vol.103 , pp. 117202
- Jang, H.J.¹ Appelbaum, I.²

11
- 70849105299
- 10.1038/nature08570
- S. P. Dach, S. Sharma, R. S. Patel, M. P. de Jong, and R. Jansen, Nature 462, 491 (2009). 10.1038/nature08570
- (2009) Nature , vol.462 , pp. 491
- Dach, S.P.¹ Sharma, S.² Patel, R.S.³ De Jong, M.P.⁴ Jansen, R.⁵

12
- 18144371161
- Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100)
- DOI 10.1103/PhysRevLett.94.056601, 056601
- X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, Phys. Rev. Lett. 94, 056601 (2005). 10.1103/PhysRevLett.94.056601 (Pubitemid 40620872)
- (2005) Physical Review Letters , vol.94 , Issue.5 , pp. 1-4
- Jiang, X.¹ Wang, R.² Shelby, R.M.³ Macfarlane, R.M.⁴ Bank, S.R.⁵ Harris, J.S.⁶ Parkin, S.S.P.⁷

13
- 33749996959
- Band structure of the epitaxial FeMgOGaAs (001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies
- DOI 10.1063/1.2361273
- Y. Lu, J. C. Le Breton, P. Turban, B. Lépine, P. Schieffer, and G. Jézéquel, Appl. Phys. Lett. 89, 152106 (2006). 10.1063/1.2361273 (Pubitemid 44570554)
- (2006) Applied Physics Letters , vol.89 , Issue.15 , pp. 152106
- Lu, Y.¹ Le Breton, J.C.² Turban, P.³ Lpine, B.⁴ Schieffer, P.⁵ Jzquel, G.⁶

14
- 34547855854
- Electrical spin injection from out-of-plane magnetized FePt/MgO tunneling junction into GaAs at room temperature
- DOI 10.1143/JJAP.46.L4
- A. Sinsarp, T. Manago, F. Takano, and H. Akinaga, Jpn. J. Appl. Phys. 46, L4 (2007). 10.1143/JJAP.46.L4 (Pubitemid 47252477)
- (2007) Japanese Journal of Applied Physics, Part 2: Letters , vol.46 , Issue.1-3
- Sinsarp, A.¹ Manago, T.² Takano, F.³ Akinaga, H.⁴

15
- 47549090965
- 10.1063/1.2957469
- S. Hvel, N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, and K. Westerholt, Appl. Phys. Lett. 93, 021117 (2008). 10.1063/1.2957469
- (2008) Appl. Phys. Lett. , vol.93 , pp. 021117
- Hvel, S.¹ Gerhardt, N.C.² Hofmann, M.R.³ Lo, F.-Y.⁴ Ludwig, A.⁵ Reuter, D.⁶ Wieck, A.D.⁷ Schuster, E.⁸ Wende, H.⁹ Keune, W.¹⁰ Petracic, O.¹¹ Westerholt, K.¹²

16
- 54149102312
- 10.1063/1.2999631
- Y. Lu, V. G. Truong, P. Renucci, M. Tran, H. Jaffrs, C. Deranlot, J.-M. George, A. Lematre, Y. Zheng, D. Demaille, P.-H. Binh, T. Amand, and X. Marie, Appl. Phys. Lett. 93, 152102 (2008). 10.1063/1.2999631
- (2008) Appl. Phys. Lett. , vol.93 , pp. 152102
- Lu, Y.¹ Truong, V.G.² Renucci, P.³ Tran, M.⁴ Jaffrs, H.⁵ Deranlot, C.⁶ George, J.-M.⁷ Lematre, A.⁸ Zheng, Y.⁹ Demaille, D.¹⁰ Binh, P.-H.¹¹ Amand, T.¹² Marie, X.¹³

17
- 65249159593
- 10.1063/1.3119320
- J. C. Le Breton, H. Saito, S. Yuasa, and K. Ando, Appl. Phys. Lett. 94, 152101 (2009). 10.1063/1.3119320
- (2009) Appl. Phys. Lett. , vol.94 , pp. 152101
- Le Breton, J.C.¹ Saito, H.² Yuasa, S.³ Ando, K.⁴

18
- 60349084365
- 10.1143/APEX.2.023006
- T. Inokuchi, T. Marukame, Z. Ishikawa, H. Sugiyama, and Y. Saito, Appl. Phys. Express 2, 023006 (2009). 10.1143/APEX.2.023006
- (2009) Appl. Phys. Express , vol.2 , pp. 023006
- Inokuchi, T.¹ Marukame, T.² Ishikawa, Z.³ Sugiyama, H.⁴ Saito, Y.⁵

19
- 66949118827
- 10.1143/APEX.2.053003
- T. Sasaki, T. Oikawa, T. Suzuki, M. Shiraishi, Y. Suzuki, and K. Tagami, Appl. Phys. Express 2, 053003 (2009). 10.1143/APEX.2.053003
- (2009) Appl. Phys. Express , vol.2 , pp. 053003
- Sasaki, T.¹ Oikawa, T.² Suzuki, T.³ Shiraishi, M.⁴ Suzuki, Y.⁵ Tagami, K.⁶

20
- 1542406893
- 10.1103/PhysRevLett.78.1335
- J. Nitta, T. Akazaki, and H. Takayanagi, Phys. Rev. Lett. 78, 1335 (1997). 10.1103/PhysRevLett.78.1335
- (1997) Phys. Rev. Lett. , vol.78 , pp. 1335
- Nitta, J.¹ Akazaki, T.² Takayanagi, H.³

21
- 26144436805
- 10.1103/PhysRevLett.87.016601
- H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schonherr, and K. H. Ploog, Phys. Rev. Lett. 87, 016601 (2001). 10.1103/PhysRevLett.87. 016601
- (2001) Phys. Rev. Lett. , vol.87 , pp. 016601
- Zhu, H.J.¹ Ramsteiner, M.² Kostial, H.³ Wassermeier, M.⁴ Schonherr, H.P.⁵ Ploog, K.H.⁶

22
- 25844435158
- Applied physics: Imaging spin transport in lateral ferromagnet/ semiconductor structures
- DOI 10.1126/science.1116865
- S. A. Crooker, M. Furis, X. Lou, C. Adelmann, D. L. Smith, C. J. Palmstrm, and P. A. Crowell, Science 309, 2191 (2005). 10.1126/science.1116865 (Pubitemid 41396064)
- (2005) Science , vol.309 , Issue.5744 , pp. 2191-2195
- Crooker, S.A.¹ Furis, M.² Lou, X.³ Adelmann, C.⁴ Smith, D.L.⁵ Palmstrom, C.J.⁶ Crowell, P.A.⁷

23
- 34147181060
- Electrical spin injection and threshold reduction in a semiconductor laser
- DOI 10.1103/PhysRevLett.98.146603
- M. Holub, J. Shin, D. Saha, and P. Battacharya, Phys. Rev. Lett. 98, 146603 (2007). 10.1103/PhysRevLett.98.146603 (Pubitemid 46557443)
- (2007) Physical Review Letters , vol.98 , Issue.14 , pp. 146603
- Holub, M.¹ Shin, J.² Saha, D.³ Bhattacharya, P.⁴

24
- 75749099289
- 10.1063/1.3282799
- H. Saito, J. C. Le Breton, V. Zayets, S. Yuasa, and K. Ando, Appl. Phys. Lett. 96, 012501 (2010). 10.1063/1.3282799
- (2010) Appl. Phys. Lett. , vol.96 , pp. 012501
- Saito, H.¹ Le Breton, J.C.² Zayets, V.³ Yuasa, S.⁴ Ando, K.⁵

25
- 68949161716
- 10.1143/APEX.2.083003
- H. Saito, J. C. Le Breton, V. Zayets, S. Yuasa, and K. Ando, Appl. Phys. Express 2, 083003 (2009). 10.1143/APEX.2.083003
- (2009) Appl. Phys. Express , vol.2 , pp. 083003
- Saito, H.¹ Le Breton, J.C.² Zayets, V.³ Yuasa, S.⁴ Ando, K.⁵

26
- 0004005306
- 2nd ed. (Wiley, New York)
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

27
- 35548963321
- Transport property study of MgO-GaAs(001) contacts for spin injection devices
- DOI 10.1063/1.2802727
- J. C. Le Breton, S. Le Gall, G. Jézéquel, B. Lépine, P. Schieffer, and P. Turban, Appl. Phys. Lett. 91, 172112 (2007). 10.1063/1.2802727 (Pubitemid 350015238)
- (2007) Applied Physics Letters , vol.91 , Issue.17 , pp. 172112
- Le Breton, J.C.¹ Le Gall, S.² Jzquel, G.³ Lpine, B.⁴ Schieffer, P.⁵ Turban, P.⁶

28
- 0017556846
- Work function of the elements and its periodicity
- DOI 10.1063/1.323539
- H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977). 10.1063/1.323539 (Pubitemid 8557760)
- (1977) Journal of Applied Physics , vol.48 , Issue.11 , pp. 4729-4733
- Michaelson Herbert, B.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.