Effects of growth temperature for buffer layers on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

Optical Materials

Volumn 34, Issue 9, 2012, Pages 1543-1548

  Kim, Min Su ^a   Kim, Soaram ^a   Nam, Giwoong ^a   Lee, Dong Yul ^b   Leem, Jae Young ^a  

^a Inje University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Photoluminescence; Plasma assisted molecular beam epitaxy; Porous silicon; Thin film; Zinc oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CRYSTAL ATOMIC STRUCTURE; GROWTH TEMPERATURE; II-VI SEMICONDUCTORS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANORODS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTAL QUALITIES; LUMINESCENT EFFICIENCY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; STRUCTURAL AND OPTICAL PROPERTIES; ZNO THIN FILM;

THIN FILMS;

EID: 84861348602     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2012.03.024     Document Type: Article

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