Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient

Thin Solid Films

Volumn 515, Issue 17, 2007, Pages 6721-6725

  Park, Dong Jun ^a   Lee, Jeong Yong ^a   Park, Tae Eun ^b   Kim, Young Yi ^c   Cho, Hyung Koun ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Dong A University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Buffer layer; RF sputter; Si substrate; TEM; ZnO films

Indexed keywords

ANNEALING; ARGON; DIFFRACTION; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTALLINITY; IN-SITU THERMAL ANNEALING; TEMPERATURE ELEVATION; TWO-STEP GROWTH;

THIN FILMS;

EID: 34247610370     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.01.047     Document Type: Article

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