ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE

Journal of Crystal Growth

Volumn 286, Issue 1, 2006, Pages 61-65

  Xiu, Faxian ^a   Yang, Zheng ^a   Zhao, Dengtao ^a   Liu, Jianlin ^a   Alim, Khan A ^a   Balandin, Alexander A ^a   Itkis, Mikhail E ^a   Haddon, Robert C ^a  

^a University of California Riverside   (United States)

Author keywords

A1. Atomic force microscopy; A1. Photoluminescence; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. ZnO buffer layer; B2. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON CYCLOTRON RESONANCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; X RAY DIFFRACTION; ZINC OXIDE;

GROWTH TEMPERATURE; SEMICONDUCTING II-VI MATERIALS; ZNO BUFFER LAYER;

FILM GROWTH;

EID: 28244502289     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.056     Document Type: Article

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