Growth and characterization of zinc-oxide films grown by Using plasma-assisted molecular beam epitaxy on (111) silicon substrates with Ti and titanium compound buffer layers

Journal of the Korean Physical Society

Volumn 53, Issue 1, 2008, Pages 276-281

  Yang, Sang Mo ^a   Han, Seok Kyu ^a   Kang, Dong Suk ^a   Kim, Jae Goo ^a   Hong, Soon Ku ^a   Lee, Jae Wook ^b   Lee, Jeong Yong ^b   Song, Jung Hoon ^c   Yao, Takafumi ^d  

^a Chungnam National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Kongju National University   (South Korea)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Buffer layer; PAMBE; Si substrate; ZnO

Indexed keywords

EID: 49649117766     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.276     Document Type: Conference Paper

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