Effects of growth interruption of ZnO buffer layers on the structural and the optical properties of ZnO thin films grown by using PA-MBE

Journal of the Korean Physical Society

Volumn 56, Issue 6, 2010, Pages 1833-1837

  Cho, Min Young ^a   Kim, Min Su ^a   Choi, Hyun Young ^a   Jeon, Su Min ^a   Kim, Ghun Sik ^a   Kim, Do Yeob ^a   Yim, Kwang Gug ^a   Leem, Jae Young ^a   Lee, Dong Yul ^b   Kim, Jin Soo ^c   Kim, Jong Su ^d   Lee, Joo In ^e  

^a Inje University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Chonbuk National University   (South Korea)

^d Yeungnam University   (South Korea)

^e Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Field emission scanning electron microscopy; Interruption; Molecular beam epitaxy; Photoluminescence; X ray diffraction; Zinc oxide

Indexed keywords

EID: 77954844487     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.56.1833     Document Type: Article

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