Porous Si(1 1 1) and Si(1 0 0) as an intermediate buffer layer for nanocrystalline InN films

Journal of Alloys and Compounds

Volumn 479, Issue 1-2, 2009, Pages

  Chuah, L S ^a   Hassan, Z ^a   Ng, S S ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

FTIR; InN; Porous silicon; Raman; Reactive sputtering; SEM; XRD

Indexed keywords

EID: 67349131168     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.01.085     Document Type: Letter

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