Ultimate bending strength of Si nanowires

Nano Letters

Volumn 12, Issue 5, 2012, Pages 2599-2604

  Stan, G ^a   Krylyuk, S ^a,b   Davydov, A V ^a   Levin, I ^a   Cook, R F ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b The Institute for Research in Electronics and Applied Physics   (United States)

Author keywords

atomic force microscopy; bending tests; Fracture strength; nanomanipulation; Si nanowires

Indexed keywords

BENDING DYNAMICS; DEFECT-FREE; FLAT SUBSTRATES; IDEAL STRENGTH; NANOMANIPULATIONS; SI NANOWIRE; TEST PLATFORMS;

ADHESION; ATOMIC FORCE MICROSCOPY; BENDING STRENGTH; BENDING TESTS; FRACTURE TOUGHNESS; NANOTUBES; SILICON;

NANOWIRES;

EID: 84861022570     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300957a     Document Type: Article

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