A stretchable form of single-crystal silicon for high-performance electronics on rubber subtrates

Science

Volumn 311, Issue 5758, 2006, Pages 208-212

  Khang, Dahl Young ^a,b   Jiang, Hanqing ^a   Huang, Young ^a   Rogers, John A ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; MOSFET DEVICES; SEMICONDUCTOR DIODES; SINGLE CRYSTALS; STRAIN; STRETCHING; SUBSTRATES; SYNTHETIC RUBBER;

DOPANTS; HIGH-PERFORMANCE ELECTRONICS; P-N DIODES; RUBBER SUBSTRATES;

SILICON;

ELASTOMER; METAL OXIDE; RUBBER; SILICON;

SILICON;

ARTICLE; CALCULATION; COMPRESSION; CRYSTAL STRUCTURE; DEVICE; DIELECTRIC CONSTANT; DIODE; ELECTRODE; ELECTRONICS; GEOMETRY; MATHEMATICAL ANALYSIS; PERFORMANCE; PRIORITY JOURNAL; SEMICONDUCTOR; TENSION; WAVEFORM; YOUNG MODULUS;

EID: 30844433983     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1121401     Document Type: Article

References (34)

1. S. R. Forrest, Nature 428, 911 (2004).
2. For recent progress and reviews, see Proc. IEEE 93, issues 7 and 8 (2005).
3. J. A. Rogers et al., Proc. Natl. Acad. Sci. U.S.A. 98, 4835 (2001).
4. H. O. Jacobs, A. R. Tao, A. Schwartz, D. H. Gracias, G. M. Whitesides, Science 296, 323 (2002).
5. H. E. A. Huitema et al., Nature 414, 599 (2001).
6. C. D. Sheraw et al., Appl. Phys. Lett. 80, 1088 (2002).
7. Y. Chen et al., Nature 423, 136 (2003).
8. H. C. Jin, J. R. Abelson, M. K. Erhardt, R. G. Nuzzo, J. Vac. Sci. Technol. B 22, 2548 (2004).
9. P. H. I. Hsu et al., IEEE Trans. Electron. Devices 51, 371 (2004).
10. T. Someya et al., Proc. Natl. Acad. Sci. U.S.A. 101, 9966 (2004).
11. H. C. Lim et al., Sens. Act. A 119, 332 (2005).
12. J. Vandeputte et al., U.S. Patent 6, 580, 151 (2003).
13. T. Sekitani et al., Appl. Phys. Lett. 86, 073511 (2005).
14. E. Menard, R. G. Nuzzo, J. A. Rogers, Appl. Phys. Lett. 86, 093507 (2005).
15. H. Gleskova et al., J. Noncryst. Solids 338, 732 (2004).
16. S.-H. Hur, O. O. Park, J. A. Rogers, Appl. Phys. Lett. 86, 243502 (2005).
17. X. F. Duan et al., Nature 425, 274 (2003).
18. Z. Suo, E. Y. Ma, H. Gleskova, S. Wagner, Appl. Phys. Lett. 74, 1177 (1999).
19. Y.-L Loo et al., Proc. Natl. Acad. Sci. U.S.A. 99, 10252 (2002).
20. T. Someya et al., Proc. Natl. Acad. Sci. U.S.A. 102, 12321 (2005).
21. S. P. Lacour, J. Jones, S. Wagner, Z. G. Suo, Proc. IEEE 93, 1459 (2005).
22. S. P. Lacour et al., Appl. Phys. Lett. 82, 2404 (2003).
23. D. S. Gray, J. Tien, C. S. Chen, Adv. Mater. 16, 393 (2004).
24. R. Faez, W. A. Gazotti, M. A. De Paoli, Polymer 40, 5497 (1999).
25. C. A. Marquette, L. J. Blum, Biosens. Bioelectron. 20, 197 (2004).
26. X. Chen, J. W. Hutchinson, J. Appl. Mech. 71, 597 (2004).
27. Z. Y. Huang, W. Hong, Z. Suo, J. Mech. Phys. Solids 53, 2101 (2005).
28. Properties of Silicon (INSPEC, Institution of Electrical Engineers, New York, 1988).
29. A. Bietsch, B. Michel, J. Appl. Phys. 88, 4310 (2000).
30. N. Bowden et al., Nature 146, 146 (1998).
31. W. T. S. Huck et al., Langmuir 16, 3497 (2000).
32. C. M. Stafford et al., Nat. Mater. 3, 545 (2004).
33. Materials and methods are available as supporting material on Science Online.
34. We thank T. Banks for help with processing using the facilities at the Frederick Seitz Materials Research Laboratory. This work was supported by the Defense Advanced Research Projects Agency-funded Air Force Research Laboratory-managed Macroelertronics Program Contract FA8650-04-C-7101, by the U.S. Department of Energy under grant DEFG02-91-ER45439, and by NSF under grant DMI-0328162.