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Volumn 11, Issue 6, 2011, Pages 2382-2385

Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in si nanowires

Author keywords

atomic scale; crystal amorphous transition; Lomer dislocation; Si nanowires; ultralarge bent strain

Indexed keywords

ATOMIC SCALE; CRYSTAL AMORPHOUS TRANSITION; LOMER DISLOCATION; SI NANOWIRES; ULTRALARGE BENT STRAIN;

EID: 79958865002     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200735p     Document Type: Article
Times cited : (102)

References (40)
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    • Proceedings of the 3rd IEEE Conference on Nanotechnology, San Francisco, CA, August 12-14,; Vol 2, pp - 880.
    • Chau, M.; Englander, O.; Lin, L. Proceedings of the 3rd IEEE Conference on Nanotechnology, San Francisco, CA, August 12-14, 2003; Vol 2, pp 879 - 880.
    • (2003) , pp. 879
    • Chau, M.1    Englander, O.2    Lin, L.3
  • 24
    • 0003613155 scopus 로고    scopus 로고
    • Prentice Hall: Englewood Cliffs, NJ,; ISBN 0-13-905720-X.
    • Dowling, N. E. Mechanical Behavior of Materials; Prentice Hall: Englewood Cliffs, NJ, 1999; ISBN 0-13-905720-X.
    • (1999) Mechanical Behavior of Materials
    • Dowling, N.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.