Valence band offset at GaN/β-Si 3N 4 and β-Si 3N 4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Thin Solid Films

Volumn 520, Issue 15, 2012, Pages 4911-4915

  Kumar, Mahesh ^a,b   Roul, Basanta ^a,b   Bhat, Thirumaleshwara N ^a   Rajpalke, Mohana K ^a   Kalghatgi, A T ^b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

Molecular beam epitaxy; Nitrides; X ray photo emission spectroscopy

Indexed keywords

CONDUCTION BAND OFFSET; GAN EPILAYERS; HIGH-CONTENT; INTERFACE DIPOLE; INTERFACE FORMATION; NITROGEN ATOM; PHOTOELECTRON SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SI (1 1 1); SI(111) SUBSTRATE; VALENCE BAND OFFSETS; X RAY PHOTOEMISSION SPECTROSCOPY;

EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 84860267327     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.051     Document Type: Article

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