Subnitride and valence band offset at Si3 N4 Si interface formed using nitrogen-hydrogen radicals

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Higuchi, Masaaki ^a   Sugawa, Shigetoshi ^a   Ikenaga, Eiji ^b   Ushio, Jiro ^c   Nohira, Hiroshi ^d   Maruizumi, Takuya ^d   Teramoto, Akinobu ^a   Ohmi, Tadahiro ^a   Hattori, Takeo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c HITACHI LTD   (Japan)

^d TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; NITRIDES; PHOTOEMISSION; SILICON COMPOUNDS; THIN FILMS; VALENCE BANDS;

NITRIDE FILMS; NITROGEN HYDROGEN RADICALS; SUBNITRIDE; TOTAL AREA DENSITY;

INTERFACES (MATERIALS);

EID: 33947607587     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2715037     Document Type: Article

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