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Volumn 45, Issue 11, 2010, Pages 1581-1585
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Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE
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Author keywords
A. Nitrides; B. Epitaxial growth; B. Luminescence; C. X ray diffraction
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Indexed keywords
A. NITRIDES;
B. EPITAXIAL GROWTH;
B. LUMINESCENCE;
CORE-LEVEL PHOTOELECTRON SPECTROSCOPY;
CRYSTALLINITIES;
GAN EPILAYERS;
GAN FILM;
GAN GROWTH;
GROWTH OF GAN;
GROWTH PROCESS;
HIGH QUALITY;
HIGH TEMPERATURE;
LOW TEMPERATURE BUFFER LAYERS;
LOW TEMPERATURES;
MATERIAL QUALITY;
MICRO-RAMAN;
NEW PROCESS;
NITRIDATION TIME;
PHOTOLUMINESCENCE MEASUREMENTS;
QUALITY OF SILICONS;
SI (1 1 1);
SI SUBSTRATES;
SI SURFACES;
SUBSTRATE NITRIDATION;
SURFACE AND INTERFACE STRUCTURES;
ULTRATHIN SILICON;
DIFFRACTION;
EPITAXIAL GROWTH;
FILM GROWTH;
GALLIUM NITRIDE;
LUMINESCENCE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NITRIDATION;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SILICON NITRIDE;
SUBSTRATES;
SURFACE ROUGHNESS;
SURFACES;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
GALLIUM ALLOYS;
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EID: 77957325575
PISSN: 00255408
EISSN: None
Source Type: Journal
DOI: 10.1016/j.materresbull.2010.07.025 Document Type: Article |
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Times cited : (26)
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References (20)
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