Valence band offset of [formula omitted] heterojunction measured by x-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 93, Issue 24, 2008, Pages 2779-

  Zhang, B L ^a   Sun, G S ^a   Guo, Y ^a   Zhang, P F ^a   Zhang, R Q ^a   Fan, H B ^a   Liu, X L ^a   Yang, S Y ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRONEGATIVITY; GALLIUM; HETEROJUNCTIONS; OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; HEAT CONDUCTION; OPTOELECTRONIC DEVICES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SILICON CARBIDE; SPECTRUM ANALYSIS;

BAND OFFSET; INTERFACE-INDUCED GAP; BAND ALIGNMENTS; CONDUCTION BAND OFFSETS; VALENCE BAND OFFSETS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 38049026692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3046116     Document Type: Article

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