Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Veal, T D ^a   King, P D C ^a   Hatfield, S A ^a   Bailey, L R ^a   McConville, C F ^a   Martel, B ^b   Moreno, J C ^b   Frayssinet, E ^b   Semond, F ^b   Zuniga Perez J ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; LUMINESCENCE OF ORGANIC SOLIDS; NITRIDES; PHOTOELECTRICITY; PHOTOEMISSION; VALENCE BANDS; ZINC OXIDE;

BAND LINE UP; BAND OFFSETS; CONDUCTION BAND OFFSETS; HIGH RESOLUTIONS; PHOTOEMISSION SPECTROSCOPIES; VALENCE BAND OFFSETS;

HETEROJUNCTIONS;

EID: 56849123835     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3032911     Document Type: Article

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