Electronic structure and charge transfer in α- and and at the interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 4, 1998, Pages 1887-1895

  Zhao, G ^a   Bachlechner, M ^a  

^a Louisiana State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001422020     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.1887     Document Type: Article

References (40)

1. P. Vashishta, R. K. Kalia, and I. Ebbsjö, Phys. Rev. Lett. 75, 858 (1995).
2. P. Vashishta, R. K. Kalia, S. W. de Leeuw, D. L. Greenwell, A. Nakano, W. Jin, J. Yu, L. Bi, and W. Li, Comput. Mater. Sci. 2, 180 (1994).
3. P. Vashishta, A. Nakano, R. K. Kalia, and I. Ebbsjö, Mater. Sci. Eng., B 37, 56 (1996).
4. S. Hasegawa, L. He, T. Inokuma, and Y. Kurata, Phys. Rev. B 46, 12 478 (1992).
5. P. Vashishta, R. K. Kalia, A. Nakano, W. Li, and I. Ebbsjö, in Amorphous Insulators and Semiconductors, NATO Advanced Study Institute Series, edited by M. F. Thorpe and M. I. Mitkova (Kluwer Academic, Dordrecht, 1997), pp. 151-213;
6. T. C. K. Loong, P. Vashishta, R. K. Kalia, and I. Ebbsjö, Europhys. Lett. 31, 201 (1995).
7. A. K. Rappe and W. A. Goddard III, J. Phys. Chem. 95, 3358 (1991).
8. W. J. Mortier, S. K. Ghosh, and S. Shankar, J. Am. Chem. Soc. 108, 4315 (1986).
9. R. N. Katz, Science 208, 841 (1980).
10. A. Madhukar, Thin Solid Films 231, 8 (1993).
11. K. Kaviani, J. Chen, K. Hu, L. Chen, and A. Madhukar, J. Vac. Sci. Technol. B 10, 793 (1992).
12. S. M. Sze, J. Appl. Phys. 38, 2951 (1967).
13. T. Ito, T. Nakamura, and H. Ishikawa, IEEE Trans. Electron Devices 29, 498 (1982).
14. R. Hezel, Radiat. Eff. 65, 101 (1982).
15. S. P. Murarka, C. C. Chang, and A. C. Adams, J. Electrochem. Soc. 126, 996 (1979).
16. A. Stesmans and G. Van Gorp, Phys. Rev. B 52, 8904 (1995).
17. C. Meyer et. al Phys. Rev. Lett. 74, 3001 (1995).
18. R. Karcher, L. Ley, and R. L. Johnson, Phys. Rev. B 30, 1896 (1984).
19. L. Cartz and J. D. Jorgensen, J. Appl. Phys. 52, 236 (1981).
20. E. Bauer, Y. Wei, T. Müller, A. Pavlovska, and I. S. T. Tsong, Phys. Rev. B 51, 17 891 (1995).
21. A. Y. Liu and M. Cohen, Phys. Rev. B 41, 10 727 (1990).
22. Y. N. Xu and W. Y. Ching, Phys. Rev. B 51, 17 379 (1995).
23. Y. X. Xu and W. Y. Ching, Physica B 150, 32 (1988).
24. P. J. Feibelman, J. A. Appelbaum, and D. R. Hamann, Phys. Rev. B 20, 1433 (1979).
25. B. N. Harmon, W. Weber, and D. R. Hamann, Phys. Rev. B 25, 1109 (1982).
26. W. Y. Ching, G. L. Zhao, and Y. He, Phys. Rev. B 42, 10 878 (1990).
27. G. L. Zhao, Y. He, and W. Y. Ching, Phys. Rev. B 42, 10 887 (1990).
28. G. L. Zhao and W. Y. Ching, Phys. Rev. Lett. 62, 2511 (1989).
29. G. L. Zhao, T. C. Leung, B. N. Harmon, M. Keil, M. Muller, and W. Weber, Phys. Rev. B 40, 7999 (1989).
30. G. L. Zhao and B. N. Harmon, Phys. Rev. B 45, 2818 (1992).
31. M. E. Bachlechner, I. Ebbsjö, R. K. Kalia, and P. Vashishta, in Amorphous and Crystalline Insulating Thin Films IV, edited by S. Christoloveanu, R. Devine, Y. Homma, J. Kanicki, M. Matsumura, and W. Warren, MRS Symposia Proceedings No. 446 (Materials Research Society, Pittsburgh, 1996), p. 157.
32. K. Kato, Z. Inoue, K. Kijima, I. Kawada, and H. Tanaka, J. Am. Ceram. Soc. 58, 90 (1975).
33. I. Kohatsu and J. W. McCauley, Mater. Res. Bull. 9, 917 (1974).
34. S. N. Ruddlesden and P. Popper, Acta Crystallogr. 11, 465 (1958).
35. R. Grün, Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem. 35, 800 (1979).
36. O. Borgen and H. M. Seip, Acta Chem. Scand. 15, 1789 (1961).
37. C. Senemaud, M. Driss-khodja, A. Gheorghiu, S. Harel, G. Dufour, and H. Roulet, J. Appl. Phys. 74, 5042 (1993).
38. A. L. Shabalov, M. S. Feldman, and M. Z. Bashirov, Phys. Status Solidi B 145, K71 (1988).
39. H. Kurata, M. Hirose, and Y. Osaka, Jpn. J. Appl. Phys. 20, L811 (1981).
40. J. T. Milek, Handbook of Electronic Materials (IFI/Plenum, New York, 1971), Vol. 3.