Nitridation of Si(1 1 1) for growth of 2H-AlN(0 0 0 1)/β-Si3N4 /Si(1 1 1) structure

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3049-3053

  Yamabe, N ^a   Shimomura, H ^a   Shimamura, T ^a   Ohachi, T ^a  

^a DOSHISHA UNIVERSITY   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B1. Polarity

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; B1. POLARITY;

ATOMIC FORCE MICROSCOPY; ATOMS; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; ELECTRON DIFFRACTION; IONIZATION OF GASES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDATION; NITRIDES; NITROGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM WIRES; SILICON; SOIL CONSERVATION; SULFUR COMPOUNDS; SURFACE MORPHOLOGY;

SILICON ALLOYS;

EID: 65749109089     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.076     Document Type: Article

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