Selective epitaxial growth of AlN and GaN nanostructures on Si(1 1 1) by using NH3 as nitrogen source

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 419-426

  Vezian S ^a   Le Louarn, A ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

A1. Nanostructures; A1. Reflection high energy electron diffraction; A1. Surface structure; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; NITRIDES; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; SURFACE NITRIDATION;

ALUMINUM COMPOUNDS;

EID: 34247349978     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.01.007     Document Type: Article

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