Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects

Journal of Applied Physics

Volumn 111, Issue 6, 2012, Pages

  Ryu, Suk Kyu ^a   Zhao, Qiu ^a   Hecker, Michael ^b   Son, Ho Young ^c   Byun, Kwang Yoo ^c   Im, Jay ^a   Ho, Paul S ^a   Huang, Rui ^a  

^a The University of Texas at Austin   (United States)

^b GLOBALFOUNDRIES   (Germany)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH DEPENDENCE; DEVICE INTEGRATION; EFFECTIVE SOLUTION; ELASTIC ANISOTROPY; METAL PLASTICITY; MICRO RAMAN MEASUREMENTS; MICRO RAMAN SPECTROSCOPY; NEAR-SURFACE STRESS; RAMAN DATA; RAMAN MEASUREMENTS; STRUCTURE-BASED; SURFACE OXIDE LAYER; THERMOMECHANICAL RELIABILITY; THREE DIMENSIONAL INTEGRATION; THROUGH SILICON VIAS;

FINITE ELEMENT METHOD; RAMAN SPECTROSCOPY;

STRESS CONCENTRATION;

EID: 84859536446     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3696980     Document Type: Article

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