Extraction of the appropriate material property for realistic modeling of through-silicon-vias using μ-Raman spectroscopy

2008 IEEE International Interconnect Technology Conference, IITC

Volumn , Issue , 2008, Pages 16-18

  Okoro, C ^a,b   Yang, Y ^a,b   Vandevelde, B ^a   Swinnen, B ^a   Vandepitte, D ^b   Verlinden, B ^b   De Wolf, I ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; COMPUTER NETWORKS; COPPER; FINITE ELEMENT METHOD; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID SOLIDIFICATION; SILICON; SPECTRUM ANALYSIS;

FINITE ELEMENT MODELING; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; THROUGH-SILICON-VIAS; YIELD CRITERION;

EXTRACTION;

EID: 50949109688     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2008.4546912     Document Type: Conference Paper

References (10)

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10. M. Miśkiewicz et al, "Finite Element Method Modelling of the Properties of a Cu-SIC Composite under Cyclic Loading Conditions", Mater. Sci.-Poland, Vol. 25, No. 3, 2007.