Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via

Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

  Koseski, Ryan P ^a,d   Osborn, William A ^a   Stranick, Stephan J ^a   Delrio, Frank W ^a   Vaudin, Mark D ^a   Dao, Thuy ^b   Adams, Vance H ^c   Cook, Robert F ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Freescale Semiconductor   (United States)

^c RF Division   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; COMPLEX STRESS; CONFOCAL RAMAN MICROSCOPY; ELASTIC ANISOTROPY; LINE SCAN; MICRO-SCALES; MODEL RESULTS; PEAK SHIFT; RAMAN PEAK SHIFTS; RAMAN SHIFT; STRAIN TENSOR; STRESS TENSORS; THERMAL EXPANSION MISMATCH; THREE-DIMENSIONAL STRESS;

FINITE ELEMENT METHOD; TENSORS; THERMAL EXPANSION; TUNGSTEN;

THREE DIMENSIONAL;

EID: 80055007029     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3644971     Document Type: Article

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