3D-interconnect: Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy

Microelectronic Engineering

Volumn 92, Issue , 2012, Pages 24-28

  Kong, Laywai ^a   Rudack, Andrew C ^b   Krueger, Peter ^c   Zschech, Ehrenfried ^c   Arkalgud, Sitaram ^b   Diebold, A C ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b SEMATECH   (United States)

^c FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

3D X ray tomography; 3D interconnect; Copper extrusion; Round TSVs; TSV; Void induced; Void inspection; X ray microscopy

Indexed keywords

3D-INTERCONNECT; ROUND TSVS; TSV; VOID INDUCED; X-RAY MICROSCOPY; X-RAY TOMOGRAPHY;

ANNEALING; CHEMICAL MECHANICAL POLISHING; COPPER; EXTRUSION; IMAGING SYSTEMS; INSPECTION; REDUCTION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SURFACE DEFECTS; VISUALIZATION; X RAY MICROSCOPES; X RAYS;

THREE DIMENSIONAL;

EID: 84858281125     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.04.012     Document Type: Conference Paper

References (9)

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