Micro-Raman measurements of bending stresses in micromachined silicon flexures

Journal of Microelectromechanical Systems

Volumn 12, Issue 6, 2003, Pages 779-787

  Srikar, V T ^a   Swan, Anna K ^b   Ünlü, M Selim ^b   Goldberg, Bennett B ^c   Spearing, S Mark ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Boston University   (United States)

^c Boston University   (United States)

Author keywords

Micro Raman; Microelectromechanical systems (MEMS); Reliability; Stress

Indexed keywords

BENDING (DEFORMATION); BENDING STRENGTH; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MICROMACHINING; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; RELIABILITY; SEMICONDUCTING SILICON; STRESS ANALYSIS;

DEEP REACTIVE ION ETCHING; MICRO-RAMAN MEASUREMENT;

MICROELECTROMECHANICAL DEVICES;

EID: 0142004209     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2003.820280     Document Type: Article

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