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Volumn 1, Issue 10, 2011, Pages 1508-1516

Integration of tantalum pentoxide capacitors with through-silicon vias

Author keywords

3 D integration with through silicon vias; copper electroplating; frequency response; Ta 2O 5 capacitors

Indexed keywords

ACTIVE ELEMENTS; CLOCK RATE; CLOSE PROXIMITY; COPPER ELECTROPLATING; DECOUPLING CAPACITOR; ELECTRONIC APPLICATION; INTEGRATED CIRCUIT PACKAGE; OXIDE DIELECTRIC; PARASITIC INDUCTANCES; PARASITIC RESISTANCES; SEMICONDUCTOR INDUSTRY; TANTALUM PENTOXIDE; THROUGH SILICON VIAS; VERTICAL INTERCONNECTIONS;

EID: 84859067787     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2159973     Document Type: Article
Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.