Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1346-1350

  Sun, S C ^a,b   Chen, T F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Annealing; Leakage current; MOCVD; N2O; Oxygen vacancy; Sintering; TaN; TiO2; WN

Indexed keywords

EID: 0004460439     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1346     Document Type: Article

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