Effect of process parameters on via formation in Si using deep reactive ion etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1762-1770

  Abhulimen, I U ^a   Polamreddy, S ^a   Burkett, S ^a   Cai, L ^a   Schaper, L ^a  

^a University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMATIC PRESSURE CONTROL ANGLE; SPUTTERED SEED FILM; VERTICAL INTERCONNECTS;

FLOW RATE; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE CONTROL; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SPUTTER DEPOSITION;

SILICON;

EID: 37149043216     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2787869     Document Type: Article

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