NH 3-rich growth of InGaN and InGaN/GaN superlattices by NH 3-based molecular beam epitaxy

Journal of Crystal Growth

Volumn 346, Issue 1, 2012, Pages 50-55

  Lang, J R ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

A1. Crystal morphology; A3. Molecular beam epitaxy; A3. Superlattices; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

CRYSTAL MORPHOLOGIES; GAN TEMPLATE; GROUP III; GROWTH MODES; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; INGAN ALLOY; INGAN/GAN; INTERMEDIATE TEMPERATURES; MORPHOLOGICAL INSTABILITY; OVERPRESSURE; SOURCE FLUX; SUBSTRATE TEMPERATURE;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; SUPERLATTICES; X RAY DIFFRACTION;

MOLECULAR BEAM EPITAXY;

EID: 84858330568     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.02.036     Document Type: Article

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