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Volumn 97, Issue 22, 2010, Pages

P-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

(9) Hurni, Christophe A a Bierwagen, Oliver a Lang, Jordan R a McSkimming, Brian M a Gallinat, Chad S a Young, Erin C a Browne, David A a Mishra, Umesh K a Speck, James S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPREHENSIVE ANALYSIS; IDEALITY FACTORS; LOW LEAKAGE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; N-DOPING; P-N JUNCTION; REVERSE CURRENTS; VERTICAL DEVICES;

EPITAXIAL GROWTH; GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTOR JUNCTIONS;

GALLIUM NITRIDE;

EID: 78650657890 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3521388 Document Type: Article

Times cited : (47)

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