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Volumn 98, Issue 13, 2011, Pages

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3 -based molecular beam epitaxy

(7) Lang, J R a Neufeld, C J a Hurni, C A a Cruz, S C a Matioli, E a Mishra, U K a Speck, J S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBING LAYERS; CONTACT LAYERS; EXTERNAL QUANTUM EFFICIENCY; FILL-FACTOR; HETEROJUNCTION SOLAR CELLS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; MG-DOPED; MINORITY CARRIER DIFFUSION LENGTH; OPTICAL ABSORPTION MEASUREMENT; P-I-N HETEROJUNCTIONS; P-TYPE GAN; SHORT-WAVELENGTH;

EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SOLAR CELLS;

QUANTUM EFFICIENCY;

EID: 79953749725 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575563 Document Type: Article

Times cited : (66)

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