The phase and crystal-growth study of group-III nitrides in a 2000 °C at 20 GPa region

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 26-31

  Saitoh, H ^a   Utsumi, W ^a   Kaneko, H ^a   Aoki, K ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

A1. Phase diagrams; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; LATTICE CONSTANTS; PHASE DIAGRAMS; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SYNCHROTRON RADIATION; X RAY ANALYSIS;

DIFFRACTION MEASUREMENTS; SEMICONDUCTING III-V MATERIALS; SINGLE CRYSTAL GROWTH; SOLID PHASE REACTION;

GALLIUM NITRIDE;

EID: 33847336374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.201     Document Type: Article

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