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Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

High doping level in Mg-doped GaN layers grown at low temperature

(6) Dussaigne, A a,b Damilano, B a Brault, J a Massies, J a Feltin, E b Grandjean, N b

a CRHEA CNRS (France)

b EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN SOURCES; OPTICAL OUTPUT POWER;

CRYSTAL GROWTH; DOPING (ADDITIVES); HOLE CONCENTRATION; LIGHT EMITTING DIODES; MAGNESIUM; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE;

EID: 38149054156 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2829819 Document Type: Article

Times cited : (46)

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