Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells

Journal of Crystal Growth

Volumn 247, Issue 1-2, 2003, Pages 62-68

  Kim, Sunwoon ^a   Lee, Kyuhan ^a   Park, Keunseop ^a   Kim, Chang Soo ^b  

^a Optronix Inc   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

A1. Atomic force microscopy; A1. Surfaces; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitride; B3. Light emitting diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PYROLYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SURFACES; X RAY DIFFRACTION ANALYSIS;

BARRIER GROWTH TEMPREATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037211006     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01943-7     Document Type: Article

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