InGaN multiple quantum well lasers grown by MBE

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 868-874

  Heffernan, J ^a   Kauer, M ^a   Johnson, K ^a   Zellweger, C ^a   Hooper, S E ^a   Bousquet, V ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; LASER FACETS; THRESHOLD CURRENT DENSITY;

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; OPTIMIZATION; QUANTUM WELL LASERS; THERMAL EFFECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 25444514226     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461407     Document Type: Conference Paper

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