Enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with current gain cutoff frequency of 120GHz

Applied Physics Express

Volumn 4, Issue 2, 2011, Pages

  Singisetti, Uttam ^a   Wong, Man Hoi ^a   Dasgupta, Sansaptak ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

120 GHZ; ALN; CURRENT GAIN CUTOFF FREQUENCY; DRAIN BIAS; ENHANCEMENT-MODE; GATE LENGTH; HIGH FREQUENCY OPERATION; HIGH FREQUENCY PERFORMANCE; METAL-INSULATOR-SEMICONDUCTORS; PEAK TRANSCONDUCTANCE; SMALL SIGNAL;

CUTOFF FREQUENCY; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON NITRIDE;

FIELD EFFECT TRANSISTORS;

EID: 79951637995     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.024103     Document Type: Article

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