Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1632-1639

  Skierbiszewski, C ^a,b   Wasilewski, Z R ^c   Grzegory, I ^a,b   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B3. Laser diodes

Indexed keywords

CRYSTAL GROWTH; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LADDER NETWORKS; LASERS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PLASMAS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES; TIME DIVISION MULTIPLEXING;

A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; B3. LASER DIODES; GAN SUBSTRATES; GREEN EMISSIONS; LAYER MORPHOLOGIES; LIGHT EMITTING DIODE LEDS; LOW GROWTH TEMPERATURES; NITRIDE GROWTHS; NITROGEN MOLECULES; PLASMA-ASSISTED MBE; RECENT PROGRESS; RF PLASMA SOURCES; THREADING DISLOCATION DENSITIES;

PLASMA DIODES;

EID: 63349104023     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.040     Document Type: Article

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