Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Siekacz, M ^a,b   Sawicka, M ^a,b   Turski, H ^a   Cywiski, G ^a   Khachapuridze, A ^a   Perlin, P ^a,b   Suski, T ^a   Bokowski, M ^a,b   Smalc Koziorowska, J ^a,b   Kryko, M ^a   Kudrawiec, R ^c   Syperek, M ^c   Misiewicz, J ^c   Wasilewski, Z ^d   Porowski, S ^a   Skierbiszewski, C ^a,b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION RATES; GAN SUBSTRATE; GREEN LASER; HIGHER TEMPERATURES; INDIUM CONTENT; INGAN QUANTUM WELLS; LASER STRUCTURES; LASING CONDITIONS; LASING WAVELENGTH; NITROGEN FLUXES; OPTICAL QUALITIES; OPTICALLY PUMPED; PIEZO-ELECTRIC FIELDS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

DISSOCIATION; ELECTRIC FIELDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; INDIUM; MOLECULAR BEAM EPITAXY; PUMPING (LASER); QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

OPTICALLY PUMPED LASERS;

EID: 80053535868     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3639292     Document Type: Article

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