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Volumn 20, Issue 4, 2011, Pages 39-46

Advances in ultra low dielectric constant ordered porous materials

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; DRIERS (MATERIALS); HIGH-K DIELECTRIC; LOW-K DIELECTRIC; POROUS MATERIALS;

EID: 84856887588     PISSN: 10648208     EISSN: 19448783     Source Type: Journal    
DOI: 10.1149/2.F04114if     Document Type: Article
Times cited : (37)

References (64)
  • 3
    • 84856911465 scopus 로고    scopus 로고
    • High k
    • M. Houssa, Editor, Institute of Physics, Series in Material Science and Engineering, Bristol, UK
    • High k Gate Dielectrics, M. Houssa, Editor, Institute of Physics, Series in Material Science and Engineering, Bristol, UK (2004).
    • (2004) Gate Dielectrics
  • 26
    • 84856883216 scopus 로고    scopus 로고
    • U.S. Patent No 514966
    • J. Gaynor, U.S. Patent No. 514966 (2001).
    • (2001)
    • Gaynor, J.1
  • 29
    • 84856872539 scopus 로고    scopus 로고
    • U.S. Patent No 7,303,985
    • H. Deng and H.-C. Liou, U.S. Patent No. 7,303,985 (2007).
    • (2007)
    • Deng, H.1    Liou, H.-C.2
  • 55
    • 0004245602 scopus 로고
    • Semiconductor Industry Association, (ITRS), Interconnect and Emerging Materials Chapters
    • Semiconductor Industry Association, International Technology Roadmap for Semiconductors, (ITRS), Interconnect and Emerging Materials Chapters, 1994-2011 Editions.
    • (1994) International Technology Roadmap for Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.