Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1375-1383

  Chen, F ^a   Bravo, O ^a   Harmon, D ^a   Shinosky, M ^a   Aitken, J ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; MATERIALS SCIENCE; SILICON COMPOUNDS; TECHNOLOGICAL FORECASTING; TECHNOLOGY;

90 NM TECHNOLOGY NODE; BREAKDOWN STRENGTH; CMOS TECHNOLOGIES; LONG-TERM RELIABILITY; LOW-K MATERIALS; TECHNOLOGY DEVELOPMENT; TIME-DEPENDENT-DIELECTRIC-BREAKDOWN; ULTRA LOW-K;

DIELECTRIC MATERIALS;

EID: 50249102719     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.037     Document Type: Article

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