Planarized and nanopatterned mesoporous silica thin films by chemical-mechanical polishing of gap-filled topographically patterned substrates

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 451-461

  Arnold, Donna C ^a   Blake, Alan ^a   Quinn, Aidan ^a   Iacopino, Daniela ^a   Tobin, Joseph M ^a   Omahony, Colm ^a,b   Holmes, Justin D ^a,b   Morris, Michael A ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

Gap fill; mesoporous; planarization; ultralow dielectric constant materials

Indexed keywords

CHEMICAL-MECHANICAL POLISHING PROCESS; CMP PROCESS; GAP FILL; MESO-PORES; MESOPOROUS; MESOPOROUS SILICA THIN FILMS; NANOPATTERNING; PATTERNED SUBSTRATES; PLANARIZATION; RECTANGULAR CROSS-SECTION CHANNELS; SILICON SUBSTRATES; ULTRALOW-DIELECTRIC-CONSTANT MATERIALS;

CHEMICAL MECHANICAL POLISHING; POLISHING; SILICA; THIN FILMS; TOPOGRAPHY;

MESOPOROUS MATERIALS;

EID: 79955916269     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2046909     Document Type: Article

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