Comparison between intrinsic and integrated reliability properties of low-k materials

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Croes, K ^a   Pantouvaki, M ^a   Carbonell, L ^a   Zhao, L ^b   Beyer, G P ^a   Tokei, Zs ^a  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

Author keywords

BEOL; copper; low field; low k; TDDB

Indexed keywords

BEOL; BREAKDOWN FIELD; DISTRIBUTIONAL SHAPE; E-MODEL; HIGH FIELD CONDITIONS; INTRINSIC BREAKDOWN; INTRINSIC PROPERTY; LIFETIME MODELS; LOW FIELD; LOW-K; LOW-K MATERIALS; PLANAR CAPACITORS; POROUS LOW-K MATERIAL; POWER LAW; RELIABILITY BEHAVIOR; RELIABILITY PROPERTIES; SINGLE DAMASCENE; STATISTICAL SIMULATION; TDDB; TDDB LIFETIME; TEST MATERIALS; TEST VEHICLE;

BEHAVIORAL RESEARCH; CAPACITORS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; INTEGRATION; TESTING;

RELIABILITY;

EID: 79959309829     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784467     Document Type: Conference Paper

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