Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal-oxide semiconductor field effect transistor (MOSFET)

Solid-State Electronics

Volumn 54, Issue 4, 2010, Pages 362-367

  Cho, Heung Jae ^a   Lee, Sanghoon ^a   Park, Byung Gook ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

Author keywords

Gate leakage current fluctuation; Ig RTN; RTN; Trap energy level; Trap location

Indexed keywords

CAPTURE TIME; CONDUCTION BAND EDGE; CURRENT LEVELS; DEEP TRAPS; DRAIN VOLTAGE; EMISSION TIME; ENERGY LEVEL; GATE VOLTAGES; GATE-LEAKAGE CURRENT; IG RTN; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS-FET; OXIDE TRAPS; RANDOM TELEGRAPH NOISE; THIN GATE OXIDES; TRAP ENERGY; TRAP ENERGY LEVELS;

DRAIN CURRENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; LOCATION; METAL RECOVERY; MOS DEVICES; MOSFET DEVICES; SMELTING; TELEGRAPH;

LEAKAGE CURRENTS;

EID: 77349102707     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.12.033     Document Type: Article

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