Anomalous random telegraph signal extractions from a very large number of n-metal oxide semiconductor field-effect transistors using test element groups with 0.47 Hz-3.0MHz sampling frequency

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Abe, Kenichi ^a   Fujisawa, Takafumi ^a   Teramoto, Akinobu ^a   Watabe, Shunichi ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE DISTRIBUTIONS; ENERGY LEVEL; GATE INSULATOR; HIGH-SPEED; MEASUREMENT SYSTEM; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; RANDOM TELEGRAPH SIGNAL NOISE; RANDOM TELEGRAPH SIGNALS; SAMPLING FREQUENCIES; SPATIAL LOCATION; STATISTICAL ANALYSIS; TEMPERATURE DEPENDENCE; TEST CIRCUIT; TEST ELEMENT GROUPS; TIME CONSTANTS;

DRAIN CURRENT; FLASH MEMORY; METALLIC COMPOUNDS; MOS DEVICES; SIGNAL PROCESSING; TELEGRAPH;

FIELD EFFECT TRANSISTORS;

EID: 77952480719     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C044     Document Type: Article

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